smbj5.0a thru smbj188a www.vishay.com vishay general semiconductor revision: 26-jul-12 1 document number: 88392 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional devices use ca suffix (e.g. smbj10ca). electrical characteristics apply in both directions. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 600 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, and telecommunication. mechanical data case: do-214aa (smbj) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal primary characteristics v wm 5.0 v to 188 v p ppm 600 w i fsm (uni-directional only) 100 a t j max. 150 c do-214aa (smb j-bend) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power di ssipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) i fsm 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
smbj5.0a thru smbj188a www.vishay.com vishay general semiconductor revision: 26-jul-12 2 document number: 88392 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are cons istent with ansi/ieee c62.35 (5) for the bi-directional smbg/smbj5.8ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 50 a (uni-dir ectional only) (+) underwriters laboratory recognition for the classification of pr otectors (qvgq2) under the ul standard for safety 497b and fil e number e136766 for both uni-d irectional and bi-d irectional devices electrical characteristics (t a = 25 c unless otherwise noted) device type modified j bend lead device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max. (+) smbj5.0a (5) ke ke 6.40 7.07 10 5.0 800 65.2 9.2 (+) smbj6.0a kg kg 6.67 7.37 10 6.0 800 58.3 10.3 (+) smbj6.5a kk ak 7.22 7.98 10 6.5 500 53.6 11.2 (+) smbj7.0a km km 7.78 8.60 10 7.0 200 50.0 12.0 (+) smbj7.5a kp ap 8.33 9.21 1.0 7.5 100 46.5 12.9 (+) smbj8.0a kr ar 8.89 9.83 1.0 8.0 50 44.1 13.6 (+) smbj8.5a kt at 9.44 10.4 1.0 8.5 20 41.7 14.4 (+) smbj9.0a kv av 10.0 11.1 1.0 9.0 10 39.0 15.4 (+) smbj10a kx ax 11.1 12.3 1.0 10 5.0 35.3 17.0 (+) smbj11a kz kz 12.2 13.5 1.0 11 5.0 33.0 18.2 (+) smbj12a le be 13.3 14.7 1.0 12 5.0 30.2 19.9 (+) smbj13a lg lg 14.4 15.9 1.0 13 1.0 27.9 21.5 (+) smbj14a lk bk 15.6 17.2 1.0 14 1.0 25.9 23.2 (+) smbj15a lm bm 16.7 18.5 1.0 15 1.0 24.6 24.4 (+) smbj16a lp lm 17.8 19.7 1.0 16 1.0 23.1 26.0 (+) smbj17a lr lr 18.9 20.9 1.0 17 1.0 21.7 27.6 (+) smbj18a lt bt 20.0 22.1 1.0 18 1.0 20.5 29.2 (+) smbj20a lv lv 22.2 24.5 1.0 20 1.0 18.5 32.4 (+) smbj22a lx bx 24.4 26.9 1.0 22 1.0 16.9 35.5 (+) smbj24a lz bz 26.7 29.5 1.0 24 1.0 15.4 38.9 (+) smbj26a me ce 28.9 31.9 1.0 26 1.0 14.3 42.1 (+) smbj28a mg mg 31.1 34.4 1.0 28 1.0 13.2 45.4 (+) smbj30a mk ck 33.3 36.8 1.0 30 1.0 12.4 48.4 (+) smbj33a mm cm 36.7 40.6 1.0 33 1.0 11.3 53.3 (+) smbj36a mp cp 40.0 44.2 1.0 36 1.0 10.3 58.1 (+) smbj40a mr cr 44.4 49.1 1.0 40 1.0 9.3 64.5 (+) smbj43a mt ct 47.8 52.8 1.0 43 1.0 8.6 69.4 (+) smbj45a mv mv 50.0 55.3 1.0 45 1.0 8.3 72.7 (+) smbj48a mx mx 53.3 58.9 1.0 48 1.0 7.8 77.4 (+) smbj51a mz mz 56.7 62.7 1.0 51 1.0 7.3 82.4 (+) smbj54a ne ne 60.0 66.3 1.0 54 1.0 6.9 87.1 (+) smbj58a ng ng 64.4 71.2 1.0 58 1.0 6.4 93.6 (+) smbj60a nk nk 66.7 73.7 1.0 60 1.0 6.2 96.8 (+) smbj64a nm nm 71.1 78.6 1.0 64 1.0 5.8 103 (+) smbj70a np np 77.8 86.0 1.0 70 1.0 5.3 113 (+) smbj75a nr nr 83.3 92.1 1.0 75 1.0 5.0 121 (+) smbj78a nt nt 86.7 95.8 1.0 78 1.0 4.8 126 (+) smbj85a nv nv 94.4 104 1.0 85 1.0 4.4 137 (+) smbj90a nx nx 100 111 1.0 90 1.0 4.1 146 (+) smbj100a nz nz 111 123 1.0 100 1.0 3.7 162 (+) smbj110a pe pe 122 135 1.0 110 1.0 3.4 177 (+) smbj120a pg pg 133 147 1.0 120 1.0 3.1 193 (+) smbj130a pk pk 144 159 1.0 130 1.0 2.9 209 (+) smbj150a pm pm 167 185 1.0 150 1.0 2.5 243 (+) smbj160a pp pp 178 197 1.0 160 1.0 2.3 259 (+) smbj170a pr pr 189 209 1.0 170 1.0 2.2 275 smbj188a ps ps 209 231 1.0 188 1.0 2.0 328
smbj5.0a thru smbj188a www.vishay.com vishay general semiconductor revision: 26-jul-12 3 document number: 88392 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on minimum recommended pad layout note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance , junction to ambient (1) r ? ja 100 c/ w typical thermal resistance, junction to lead r ? jl 20 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode smbj5.0a-e3/52 0.096 52 750 7" diam eter plastic tape and reel smbj5.0a-e3/5b 0.096 5b 3200 13" diam eter plastic tape and reel smbj5.0ahe3/52 (1) 0.096 52 750 7" diameter plastic tape and reel smbj5.0ahe3/5b (1) 0.096 5b 3200 13" diameter plastic tape and reel 0.1 1 10 100 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak val u e i ppm half val u e - i ppm i pp 2 10/1000 s w a v eform as defined by r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 6000 10 1 100 200 uni-directional bi-directional c j - j u nction capacitance (pf) v w m - re v erse stand-off voltage (v) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p meas u red at zero bias v r , meas u red at stand-off voltage v w m
smbj5.0a thru smbj188a www.vishay.com vishay general semiconductor revision: 26-jul-12 4 document number: 88392 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical transient thermal impedance fig. 6 - maximum non-repetitive peak forward surge current package outline dimensions in inches (millimeters) 0.1 1.0 10 100 0.001 0.01 0.1 100 1.0 10 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 200 100 100 10 1 8.3 ms single half sine- w a v e uni-directional only nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) do-214aa (smb-j-bend) mounting pad layout 0.160 (4.06) 0.180 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.008 (0.2) 0.130 (3.30) 0.155 (3.94) 0.084 (2.13) 0.096 (2.44) 0.077 (1.95) 0.086 (2.20) cathode band 0.085 (2.159) max. 0.220 ref. 0.086 (2.18) mi n . 0.060 (1.52) mi n .
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